The new GaN power HEMT, TDG650E60, is the highest voltage GaN power device available on the market for hi-rel military and space applications, and is now available with both top- or bottom-side cooled options.
Gallium nitride devices have revolutionized power conversion in other industries and are now available in radiation tolerant, plastic encapsulated packaging that has undergone stringent reliability and electrical testing to ensure mission critical success.
The release of the TDG650E60 GaN HEMT finally delivers to customers the efficiency, size, and power-density benefits required in critical aerospace and defense power applications.
For all product lines, Teledyne e2v HiRel performs the most demanding qualification and testing tailored to the highest reliability applications. This regime includes sulfuric test, high altitude simulation, dynamic burn-in, step stress up to 175C ambient, 9V gate voltage, and full temperature testing.
Teledyne’s TDG650E60 GaN Power HEMT boasts an extremely small form factor and leverages the patented Island Technology from GaN Systems.
This technology is a scalable, vertical charge dissipating system that gives the power transistor ultra-low thermal losses, high power density, no-charge storage, and very high switching speeds.
Unlike silicon on carbide(SIC) devices, the GaN-based TDG650E60 parts can easily be implemented in parallel to increase the load current or lower the effective RDSon. The use of exclusive GaNpx packaging allows very high frequency switching and excellent thermal characteristics, enabling customers to significantly reduce the size and weight of power electronics.
“Teledyne e2v has a proud heritage of space products, and we are now bringing the unprecedented efficiency of GaN power to our customers,” said Mont Taylor, VP of Business Development for Teledyne e2v HiRel.
“These devices enable design engineers to create highly efficient, small power supplies and motor controllers which can comfortably function in high radiation environments such as space.”
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