Kioxia Corporation, a world leader in memory solutions, announced that it started sample shipments of 2Tb Quad-Level-Cell(QLC) memory devices with its eighth-generation BiCS FLASHTM 3D flash memory technology. 

This 2Tb QLC device has the highest capacity in the industry, elevating storage devices to a new capacity point that will drive growth in multiple application segments including AI.

With its latest BiCS FLASHTM technology, Kioxia has achieved both vertical and lateral scaling of memory die through proprietary processes and innovative architectures. 

In addition, the company has implemented the groundbreaking CBA(CMOS directly Bonded to Array) technology, which enables the creation of higher density devices and an industry-leading interface speed of 3.6Gbps. 

Together, these advanced technologies are applied in the creation of 2Tb QLC, resulting in the industry’s highest capacity memory device.

The 2Tb QLC is equipped with a bit density approx. 2.3 times higher and a write power efficiency approx. 70 percent higher than Kioxia’s current fifth-generation QLC device which is the highest capacity in Kioxia’s products. 

With a 16-die stacked architecture in a single memory package, the latest QLC device achieves industry-leading 4TB of capacity. It is available with a smaller package size of 11.5 x 13.5mm and a package height of 1.5mm.

Charles Giancarlo, Chief Executive Officer, Pure Storage, Inc., the IT pioneer that delivers the world’s most advanced data storage technology and services, highlighted the significance of Kioxia's latest development for the company's platform.

"We are pleased to be shipping samples of our new 2Tb QLC with the new eighth-generation BiCS FLASH technology,” said Hideshi Miyajima, Chief Technology Officer of Kioxia. 

“With its industry-leading high bit density, high speed data transfer, and superior power efficiency, the 2Tb QLC product will offer new value for rapidly emerging AI applications and large storage applications demanding power and space savings.”